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MTN10N65BE3 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
Spec. No. : C114E3
Issued Date : 2016.03.21
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN10N65BE3 BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=6A
650V
10A
0.54Ω
Description
The MTN10N65BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
⢠Low On Resistance
⢠Simple Drive Requirement
⢠Low Gate Charge
⢠Fast Switching Characteristic
⢠RoHS compliant package
Applications
⢠Open Framed Power Supply
⢠Adapter
⢠STB
Ordering Information
Device
MTN10N65BE3-0-UB-X
Package
TO-220
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN10N65BE3
CYStek Product Specification
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