MTN1012ZC3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – ESD protected N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C588C3
Issued Date : 2011.01.05
Revised Date :
Page No. : 1/7
ESD protected N-CHANNEL Enhancement Mode MOSFET
MTN1012ZC3
BVDSS
ID
20V
0.7A
300mΩ@4.5V/0.6A
Description
• Low voltage drive, 1.8V
• Easy to use in parallel
• High speed switching
• ESD protected device
• Pb-free package
RDSON(TYP) 340mΩ@2.5V/0.5A
420mΩ@1.8V/0.4A
Symbol
MTN1012ZC3
Outline
SOT-523
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25°C
TA=70°C
Pulsed Drain Current
Total Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
Symbol
BVDSS
VGS
ID
IDM
PD
Tj ; Tstg
Rth,ja
Limits
20
±12
0.7
0.4
1 *1
270
160
-55~+150
463
Unit
V
V
A
A
mW
°C
°C/W
MTN1012ZC3
CYStek Product Specification