MTN1012C3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 20V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C814C3
Issued Date : 2012.05.15
Revised Date : 2012.05.17
Page No. : 1/8
20V N-CHANNEL Enhancement Mode MOSFET
MTN1012C3
BVDSS
ID
RDSON@VGS=4.5V, ID=600mA
RDSON@VGS=2.5V,ID=400mA
RDSON@VGS=1.8V,ID=350mA
Features
• Simple drive requirement
• Small package outline
• Pb-free package
20V
560mA
320mΩ(typ)
510mΩ(typ)
980mΩ(typ)
Symbol
MTN1012C3
Outline
SOT-523
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=85°C, VGS=4.5V (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation ^TA=25℃
(Note 3)
TA=85℃
ESD susceptibility
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on FR-4 board.
3. Human body model, 1.5kΩ in series with 100pF
Limits
Unit
20
±8
V
560
mA
400
2.5
A
150
mW
80
2000 (Note 4)
V
-55~+150
°C
MTN1012C3
CYStek Product Specification