MTN04N03F3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C807F3
Issued Date : 2009.12.02
Revised Date :
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTN04N03F3
BVDSS 25V
ID
80A
RDSON 4mΩ
Features
• Low On-resistance
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTN04N03F3
Outline
TO-263
G：Gate
D：Drain
S：Source
G DS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Energy @ L=0.05mH, duty≤1%
Single Pulse Avalanche Current
Operating Junction and Storage Temperature
MTN04N03F3
Symbol
VDS
VGS
ID
ID
IDM
PD
EAS
EAR
IAS
Tj, Tstg
Limits
25
±20
80
50
170 *1
96
0.768
140 *2
40
53
-55~+150
Unit
V
V
A
A
A
W
W/°C
mJ
mJ
A
°C
CYStek Product Specification