MTF44P03N3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – 30V P-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C782N3
Issued Date : 2011.05.04
Revised Date :
Page No. : 1/7
30V P-Channel Logic Level Enhancement Mode MOSFET
MTF44P03N3
BVDSS
RDSON(Max)
ID
-30V
44mΩ
-4A
Features
• Lower gate charge
• Pb-free lead plating and Halogen-free package
Equivalent Circuit
MTF44P03N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±12
TA=25°C
-4
Continuous Drain Current
TA=70°C
ID
-3
Pulsed Drain Current
Power Dissipation
IDM
TA=25°C
TA=70°C
PD
-16 (Note 1 & 2)
1.5 (Note 3)
1 (Note 3)
Thermal Resistance, Junction to Ambient
Rth, j-a
100 (Note 3)
Operating Junction and Storage Temperature
Tj, Tstg
-55 ~ +175
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
3. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad
Unit
V
V
A
A
W
°C/W
°C
MTF44P03N3
CYStek Product Specification