MTEH0N20L3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – MTEH0N20L3 CYStek Product Specification

CYStech Electronics Corp.
Spec. No. : C882L3
Issued Date : 2012.11.16
Revised Date : 2012.12.19
Page No. : 1/8
N-Channel Enhancement Mode MOSFET
MTEH0N20L3
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
BVDSS
ID
RDSON@VGS=10V, ID=0.5A
RDSON@VGS=5V, ID=0.1A
200V
1A
0.98Ω (typ)
0.97Ω (typ)
Symbol
MTEH0N20L3
Outline
SOT-223
G：Gate
S：Source
D：Drain
D
S
D
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
*1
Single Pulse Avalanche Energy @ L=10mH, ID=1A ,
Total Power Dissipation
VDD=50V
TA=25℃
*2
TA=70℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by safe operating area
*2. Surface mounted on a 1 in² pad of 2 oz. copper, t≤10s.
Symbol
VDS
VGS
ID
ID
IDM
EAS
PD
Tj, Tstg
MTEH0N20L3
Limits
Unit
200
V
±30
V
1
A
0.8
A
4
A
5
mJ
2.5
W
1.6
-55~+150
°C
CYStek Product Specification