MTEF1P15AN6 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTEF1P15AN6
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 1/9
Description
The MTEF1P15AN6 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTEF1P15AN6
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
TC=25 °C
Continuous Drain Current
TC=70 °C
TA=25 °C (Note 1)
TA=70 °C (Note 1)
Pulsed Drain Current (Note 2, 3)
TC=25 °C
Total Power Dissipation
TC=70 °C
TA=25 °C
TA=70 °C
Operating Junction Temperature and Storage Temperature Range
Symbol Limits Unit
VDS
-150
V
VGS
±20
-1.7
-1.4
ID
A
-1.3
-1.0
IDM
-6.8
3.2
2.1
PD
W
2
1.25
Tj, Tstg -55~+150 °C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 1)
MTEF1P15AN6
Symbol
Rth,j-c
RθJA
Value
39
62.5
Unit
°C/W
CYStek Product Specification