MTEE2N20J3 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C881J3
Issued Date : 2012.12.14
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTEE2N20J3
BVDSS
ID
RDS(ON)@VGS=10V, ID=2.9A
RDS(ON)@VGS=7V, ID=1A
200V
4.5A
650 mΩ(typ)
590 mΩ(typ)
Description
The MTEE2N20J3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-252 package is universally preferred for all commercial-industrial applications.
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant and halogen-free package
Symbol
MTEE2N20J3
Outline
TO-252AB
TO-252AA
G：Gate D：Drain S：Source
MTEE2N20J3
GDS
G DS
CYStek Product Specification