MTED6N25KJ3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – lN-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C936J3
Issued Date : 2013.12.09
Revised Date :
Page No. : 1/9
lN-Channel Enhancement Mode Power MOSFET
MTED6N25KJ3 BVDSS
ID @ VGS=10V
VGS=10V, ID=5A
RDSON(TYP)
VGS=6V, ID=3A
250V
8A
422mΩ
399mΩ
Features
• ESD protected
• Low Gate Charge
• Fast Switching Characteristic
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTED6N25KJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTED6N25KJ3-0-T3-G
Package
Shipping
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTED6N25KJ3
CYStek Product Specification