MTEB6N20J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C875J3
Issued Date : 2012.12.12
Revised Date :
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTEB6N20J3
BVDSS
ID
RDS(ON)@VGS=10V, ID=3A
RDS(ON)@VGS=6V, ID=2A
200V
8.3A
300mΩ(typ)
306mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
Equivalent Circuit
MTEB6N20J3
Outline
TO-252AB
TO-252AA
G：Gate D：Drain
S：Source
GDS
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
200
VGS
±30
V
Continuous Drain Current @ TC=25°C, VGS=10V
ID
8.3
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
ID
5.3
A
IDM
18
Avalanche Current
IAS
2
Avalanche Energy @ L=10mH, IAS=2A, VDD=50V, VGS=10V
EAS
20
mJ
Repetitive Avalanche Energy @ L=0.05mH *2
EAR
5
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Pd
50
W
20
Operating Junction and Storage Temperature Range
Tj, Tstg -55~+150
°C
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
MTEB6N20J3
CYStek Product Specification