MTEB6N20E3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C875E3
Issued Date : 2015.09.07
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTEB6N20E3
BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=5.4A
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
200V
9A
308mΩ (typ)
Symbol
MTEB6N20E3
Outline
TO-220
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
MTEB6N20E3-0-UB-X
Package
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTEB6N20E3
CYStek Product Specification