MTEA5N10J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C869J3
Issued Date : 2016.07.29
Revised Date :
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTEA5N10J3
BVDSS
ID@VGS=10V, TC=25°C
RDSON@VGS=10V, ID=10A
100V
9.9A
151mΩ(TYP)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
Equivalent Circuit
MTEA5N10J3
Outline
TO-252(DPAK)
G：Gate D：Drain
S：Source
G DS
Ordering Information
Device
MTEA5N10J3-0-T3-G
Package
TO-252
(Pb-free lead plating & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTEA5N10J3
CYStek Product Specification