MTEA0N10J3 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C871J3
Issued Date : 2013.01.03
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTEA0N10J3 BVDSS
ID
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
RDSON(TYP)
VGS=10V, ID=12A
VGS=6V, ID=10A
100V
16A
83mΩ
100mΩ
Equivalent Circuit
MTEA0N10J3
Outline
TO-252AB
TO-252AA
G：Gate D：Drain
S：Source
GDS
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C (Note 1)
Continuous Drain Current @ VGS=10V, TC=100°C (Note 1)
Continuous Drain Current @ VGS=10V, TA=25°C (Note 2)
Continuous Drain Current @ VGS=10V, TA=100°C (Note 2)
Pulsed Drain Current
(Note 3)
Avalanche Current
(Note 3)
Avalanche Energy @ L=0.5mH, ID=11A, RG=25Ω (Note 2)
Repetitive Avalanche Energy@ L=0.1mH
(Note 3)
Total Power Dissipation @TC=25℃
(Note 1)
Total Power Dissipation @TC=100℃ (Note 1)
Total Power Dissipation @TA=25℃
(Note 2)
Total Power Dissipation @TA=70℃
(Note 2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
MTEA0N10J3
Limits
Unit
100
±20
V
16
11
3.7
A
2.3
64
11
30
mJ
6
60
30
W
2.5
1.6
-55~+175
°C
CYStek Product Specification