MTE8D0N08H8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C991H8
Issued Date : 2014.12.09
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE8D0N08H8
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=7V, ID=20A
80V
50A
32A
15A
12A
7.1 mΩ(typ)
7.9 mΩ(typ)
Symbol
MTE8D0N08H8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTE8D0N08H8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE8D0N08H8
CYStek Product Specification