MTE7D0N10RFP Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE7D0N10RFP
Spec. No. : C056FP
Issued Date : 2017.01.12
Revised Date :
Page No. : 1/ 8
Features
BVDSS
ID@TC=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=20A
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
100V
58A
7.4 mΩ(typ)
Symbol
MTE7D0N10RFP
Outline
TO-220FP
G：Gate
D：Drain
S：Source
GDS
Ordering Information
Device
MTE7D0N10RFP-0-UB-S
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE7D0N10RFP
CYStek Product Specification