MTE65N20H8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C872H8
Issued Date : 2016.02.01
Revised Date : 2016.04.01
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE65N20H8
BVDSS
ID @VGS=10V, TC=25°C
RDSON(TYP) VGS=10V, ID=11A
200V
24A
61mΩ
Features
 Single Drive Requirement
 Low On-resistance
 Fast Switching Characteristic
 Repetitive Avalanche Rated
 Pb-free lead plating and Halogen-free package
Symbol
MTE65N20H8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTE65N20H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE65N20H8
CYStek Product Specification