MTE65N20F3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C872F3
Issued Date : 2012.12.26
Revised Date :
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTE65N20F3 BVDSS
ID
RDSON(TYP)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
VGS=10V, ID=11A
VGS=6V, ID=5A
200V
33A
61mΩ
66mΩ
Equivalent Circuit
MTE65N20F3
Outline
TO-263
G：Gate D：Drain
S：Source
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=1.6mH, ID=20A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
Total Power Dissipation @TC=25℃
(Note 2)
Total Power Dissipation @TA=25℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
Limits
Unit
VDS
200
VGS
±20
V
ID
33
ID
23
A
IDM
70
IAS
20
EAS
320
mJ
EAR
4.6
Pd
168
W
3.75
Tj, Tstg -55~+175
°C
MTE65N20F3
CYStek Product Specification