MTE5D0P06FP Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C046FP
Issued Date : 2017.07.27
Revised Date :
Page No. : 1/ 8
P-Channel Enhancement Mode Power MOSFET
MTE5D0P06FP
Features
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-20A
-60V
-75A(silicon limit)
-44A(package limit)
-12A
6.8 mΩ(typ)
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Symbol
MTE5D0P06FP
Outline
TO-220FP
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTE5D0P06FP-0-UB-S
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE5D0P06FP
CYStek Product Specification