MTE50N15H8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C931H8
Issued Date : 2015.05.25
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE50N15H8
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=4.6A
RDS(ON)@VGS=6V, ID=3.9A
150V
26A
16A
4.6A
3.7A
41mΩ(typ)
47mΩ(typ)
Symbol
MTE50N15H8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTE50N15H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE50N15H8
CYStek Product Specification