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MTE50N10BFP Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
Spec. No. : C141FP
Issued Date : 2015.08.18
Revised Date :
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE50N10BFP
Features
BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=15A
RDS(ON)@VGS=7V, ID=10A
100V
24A
26.6 mΩ(typ)
34.2 mΩ(typ)
⢠Low On Resistance
⢠Simple Drive Requirement
⢠Low Gate Charge
⢠Fast Switching Characteristic
⢠Insulating package, front/back side insulating voltage=2500V(AC)
⢠RoHS compliant package
Symbol
MTE50N10BFP
Outline
TO-220FP
Gï¼Gate
Dï¼Drain
Sï¼Source
GDS
Ordering Information
Device
MTE50N10BFP-0-UB-S
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE50N10BFP
CYStek Product Specification
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