MTE300N20I3S Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C875I3S
Issued Date : 2017.01.25
Revised Date :
Page No. : 1/8
N -Channel Enhancement Mode Power MOSFET
MTE300N20I3S BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=3A
200V
8.3A
294mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTE300N20I3S
Outline
TO-251S
G：Gate D：Drain
S：Source
GDS
Ordering Information
Device
MTE300N20I3S-0-UA-G
Package
TO-251S
(RoHS compliant and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTE300N20I3S
CYStek Product Specification