MTE20N10FP Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C883FP
Issued Date : 2012.11.15
Revised Date : 2013.05.24
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTE20N10FP
BVDSS
ID
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=7V, ID=15A
100V
28A
18 mΩ(typ)
20 mΩ(typ)
Description
The MTE20N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Symbol
MTE20N10FP
Outline
TO-220FP
G：Gate
D：Drain
S：Source
MTE20N10FP
GDS
CYStek Product Specification