MTE1K8N25L3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C890L3
Issued Date : 2012.12.19
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode MOSFET
MTE1K8N25L3
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
BVDSS
ID
RDSON@VGS=10V, ID=0.8A
RDSON@VGS=6V, ID=0.5A
250V
0.8A
1.68Ω (typ)
1.63Ω (typ)
Symbol
MTE1K8N25L3
Outline
SOT-223
D
G：Gate
S：Source
D：Drain
S
D
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation
*1
TA=25℃
*2
TA=70℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by safe operating area
*2. Surface mounted on a 1 in² pad of 2 oz. copper, t≤10s.
Symbol
VDS
VGS
ID
ID
IDM
PD
Tj, Tstg
Limits
Unit
250
V
±20
V
0.8
A
0.6
A
3.2
A
2.5
W
1.6
-55~+150
°C
MTE1K8N25L3
CYStek Product Specification