MTE1K8N25KM3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C929M3
Issued Date : 2013.08.11
Revised Date :
Page No. : 1/8
N -Channel Enhancement Mode Power MOSFET
MTE1K8N25KM3
BVDSS
ID
RDS(ON)@VGS=10V, ID=0.5A
RDS(ON)@VGS=10V, ID=1A
RDS(ON)@VGS=10V, ID=2A
RDS(ON)@VGS=6V, ID=0.5A
250V
1A
1.33Ω(typ)
1.4Ω(typ)
1.63Ω(typ)
1.35Ω(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
• ESD protected
Equivalent Circuit
MTE1K8N25KM3
D
Outline
SOT-89
G
G：Gate
D：Drain
S：Source
S
GD D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
250
VGS
±20
V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
ID
1
ID
0.8
A
Pulsed Drain Current *1
Total Power Dissipation @TA=25℃ *2
IDM
4
Pd
2
W
ESD susceptibility *3
2000
V
Operating Junction and Storage Temperature Range
Tj, Tstg -55~+150
°C
Note : *1. Pulse width limited by maximum junction temperature.
*2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper.
*3. Human body model, 1.5kΩ in series with 100pF.
MTE1K8N25KM3
CYStek Product Specification