MTE1K8N25KJ3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C929J3
Issued Date : 2013.07.26
Revised Date : 2013.09.06
Page No. : 1/8
N -Channel Enhancement Mode Power MOSFET
MTE1K8N25KJ3
BVDSS
ID
RDS(ON)@VGS=10V, ID=2A
RDS(ON)@VGS=6V, ID=1A
250V
2.5A
1.63Ω(typ)
1.41Ω(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
• ESD protected
Equivalent Circuit
MTE1K8N25KJ3
D
G
G：Gate
D：Drain
S：Source
S
Outline
TO-252(DPAK)
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
ESD susceptibility *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Human body model, 1.5kΩ in series with 100pF
Symbol
VDS
VGS
ID
ID
IDM
Pd
Tj, Tstg
MTE1K8N25KJ3
Limits
Unit
250
±20
V
2.5
1.6
A
10
2000
V
25
W
10
-55~+150
°C
CYStek Product Specification