MTE1K8N25J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C890J3
Issued Date : 2012.12.14
Revised Date : 2012.12.19
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTE1K8N25J3
BVDSS
ID
RDS(ON)@VGS=10V, ID=1A
RDS(ON)@VGS=6V, ID=1A
250V
2.5A
1.71Ω(typ)
1.72Ω(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
Equivalent Circuit
MTE1K8N25J3
Outline
TO-252AB
TO-252AA
G：Gate D：Drain
S：Source
GDS
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
Limits
Unit
VDS
250
VGS
±20
V
ID
2.5
ID
1.6
A
IDM
10
25
Pd
W
10
Tj, Tstg -55~+150
°C
MTE1K8N25J3
CYStek Product Specification