MTE1K8N15KM3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C096M3
Issued Date : 2015.08.20
Revised Date : 2015.09.03
Page No. : 1/8
N -Channel Enhancement Mode Power MOSFET
MTE1K8N15KM3
Features
• Low gate charge
• Simple drive requirement
• Pb-free lead plating & halogen-free package
• ESD protected gate
BVDSS
ID @VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=0.5A
RDS(ON)@VGS=10V, ID=1A
RDS(ON)@VGS=10V, ID=2A
RDS(ON)@VGS=6V, ID=0.5A
150V
1A
0.97Ω(typ)
1.04Ω(typ)
1.35Ω(typ)
1.05Ω(typ)
Equivalent Circuit
MTE1K8N15KM3
D
Outline
SOT-89
G
G：Gate
D：Drain
S：Source
S
GD D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
150
±20
V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
ID
1
0.8
A
Pulsed Drain Current
*1
Total Power Dissipation @TA=25℃ *2
IDM
4
PD
2
W
Gate Source ESD susceptibility
*3
VESD(G-S)
4000
V
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Note : *1. Pulse width limited by maximum junction temperature.
*2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper.
*3. Human body model, 1.5kΩ in series with 100pF.
Thermal Data
Parameter
Thermal Resistance, Junction-to-Ambient (Note)
Thermal Resistance, Junction-to-Case
Note : Surface mounted on 1 in² copper pad of FR-4 board.
MTE1K8N15KM3
Symbol
Rth,ja
Rth,jc
Limit
62.5
20
Unit
°C/W
CYStek Product Specification