MTE1K0P15KN3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – MTE1K0P15KN3 CYStek Product Specification

CYStech Electronics Corp.
Spec. No. : C941N3
Issued Date : 2013.11.22
Revised Date :
Page No. : 1/ 9
P-Channel Enhancement Mode MOSFET
MTE1K0P15KN3
BVDSS
ID
RDSON(TYP)
VGS=-10V, ID=-0.5A
VGS=-6V, ID=-0.5A
-150V
-0.69A
1.01Ω
1.11Ω
Features
•ESD protected 2.5KV
•Advanced trench process technology
•High density cell design for ultra low on resistance
•Pb-free lead plating and halogen-free package
Equivalent Circuit
MTE1K0P15KN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTE1K0P15KN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTE1K0P15KN3
CYStek Product Specification