MTE130N20H8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C966H8
Issued Date : 2015.03.23
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE130N20H8 BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=9A
200V
11A
156 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
Symbol
MTE130N20H8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTE130N20H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE130N20H8
CYStek Product Specification