MTE115P10J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

Spec. No. : C166J3
CYStech Electronics Corp. Issued Date : 2015.06.08
Revised Date : 2015.06.11
P-Channel Enhancement Mode Power MOSFET
MTE115P10J3
BVDSS
ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-10A
RDS(ON)@VGS=-6V, ID=-10A
-100V
-14A
106mΩ(typ)
137mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & halogen-free package
Equivalent Circuit
MTE115P10J3
Outline
TO-252(DPAK)
G：Gate D：Drain
S：Source
G DS
Ordering Information
Device
MTE115P10J3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE115P10J3
CYStek Product Specification