MTE09N06J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C912J3
Issued Date : 2015.06.17
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE09N06J3
BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=7V, ID=20A
60V
50A
7 mΩ(typ)
7.9 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
MTE09N06J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTE09N06J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE09N06J3
CYStek Product Specification