MTE080A10Q8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C871Q8
Issued Date : 2016.11.28
Revised Date :
Page No. : 1/9
Dual N-Channel Enhancement Mode Power MOSFET
MTE080A10Q8
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual N-ch MOSFET package
• Pb-free lead plating & Halogen-free package
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDSON@VGS=10V, ID=2.5A
RDSON@VGS=6V, ID=2.0A
100V
2.8A
5.0A
74mΩ(typ)
82mΩ(typ)
Equivalent Circuit
MTE080A10Q8
Outline
SOP-8
D2
D2
D1
D1
G：Gate D：Drain S：Source
Pin 1
G2
S2
G1
S1
Ordering Information
Device
MTE080A10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE080A10Q8
Preliminary
CYStek Product Specification