MTE05N10FP Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C928FP
Issued Date : 2015.03.16
Revised Date : 2015.05.04
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE05N10FP
BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
100V
109A
5.9mΩ
6.2mΩ
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Symbol
MTE05N10FP
Outline
TO-220FP
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTE05N10FP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE05N10FP
CYStek Product Specification