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MTE05N10E3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
Spec. No. : C928E3
Issued Date : 2013.11.04
Revised Date : 2013.11.12
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE05N10E3 BVDSS
ID
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
100V
140A
5.9mΩ
6.2mΩ
Features
⢠Low Gate Charge
⢠Simple Drive Requirement
⢠Repetitive Avalanche Rated
⢠Fast Switching Characteristic
⢠RoHS compliant package
Symbol
MTE05N10E3
Outline
TO-220
Gï¼Gate
Dï¼Drain
Sï¼Source
GDS
Ordering Information
Device
MTE05N10E3-0-UB-S
Package
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE05N10E3
CYStek Product Specification
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