MTE05N08E3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C918E3
Issued Date : 2013.06.10
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE05N08E3 BVDSS
ID
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
80V
180A
4.3mΩ
4.5mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTE05N08E3
Outline
TO-220
G：Gate
D：Drain
S：Source
Ordering Information
Device
Package
MTE05N08E3-0-UB-S
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
MTE05N08E3
CYStek Product Specification