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MTE050P10E3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
Spec. No. : C975E3
Issued Date : 2016.05.26
Revised Date :
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTE050P10E3
BVDSS
ID @ VGS=-10V, TC=25°C
ID @ VGS=-10V, TA=25°C
RDSON(TYP) @ VGS=-10V, ID=-20A
Features
⢠Low Gate Charge
⢠Simple Drive Requirement
⢠Repetitive Avalanche Rated
⢠Fast Switching Characteristic
⢠RoHS compliant package
-100V
-44A
-4.6A
40mΩ
Symbol
MTE050P10E3
Outline
TO-220
Gï¼Gate
Dï¼Drain
Sï¼Source
GDS
Ordering Information
Device
MTE050P10E3-0-UB-X
Package
Shipping
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE050P10E3
CYStek Product Specification
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