MTE030N15RH8_16 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C838H8
Issued Date : 2016.09.08
Revised Date : 2016.11.03
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTE030N15RH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
VGS=10V, ID=4.6A
RDSON(TYP)
VGS=6V, ID=3.9A
 Single Drive Requirement
 Low On-resistance
 Fast Switching Characteristic
 Repetitive Avalanche Rated
 Pb-free lead plating and Halogen-free package
150V
24.7A
5.5A
29.3mΩ
33.6mΩ
Symbol
MTE030N15RH8
G：Gate D：Drain S：Source
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTE030N15RH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE030N15RH8
CYStek Product Specification