MTE030A10QDH8 Datasheet, PDF (1/11 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C168H8
Issued Date : 2017.02.10
Revised Date :
Page No. : 1/ 11
Dual N-Channel Enhancement Mode Power MOSFET
MTE030A10QDH8
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=5A
RDS(ON)@VGS=7V, ID=4A
100V
28A
18A
5.0A
4.0A
27mΩ(typ)
31mΩ(typ)
Equivalent Circuit
MTE030A10QDH8
Outline
Pin 1
DFN5×6
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
MTE030A10QDH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE030A10QDH8
CYStek Product Specification