MTE015N10QH8 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTE015N10QH8
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(typ)@VGS=10V, ID=20A
100 V
39 A
8.8A
12.6 mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
Symbol
MTE015N10QH8
G：Gate
D：Drain
S：Source
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
Package
Shipping
MTE015N10QH8-0-T6-G
DFN5×6
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE015N10QH8
CYStek Product Specification