MTE013N10RH8 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C056H8
Issued Date : 2017.03.06
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTE013N10RH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(TYP) VGS=10V, ID=15A
100V
39A
13.1A
12mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
Symbol
MTE013N10RH8
G：Gate D：Drain S：Source
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTE013N10RH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE013N10RH8
CYStek Product Specification