MTE013N08E3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C161E3
Issued Date : 2016.01.17
Revised Date : 2016.02.19
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE013N08E3
Features
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
80V
58A
9.4A
9.5 mΩ(typ)
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTE013N08E3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTE013N08E3-0-UB-X
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE013N08E3
CYStek Product Specification