MTE011N10RJ3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C169J3
Issued Date : 2016.03.09
Revised Date : 2016.04.27
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE011N10RJ3
Features
 Low On Resistance
 Simple Drive Requirement
 Low Gate Charge
 Fast Switching Characteristic
 Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=11A
100V
48A
10.6A
10 mΩ(typ)
Symbol
MTE011N10RJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTE011N10RJ3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE011N10RJ3
CYStek Product Specification