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MTE011N10RH8 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
Spec. No. : C169H8
Issued Date : 2016.07.05
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTE011N10RH8 BVDSS
100V
ID@VGS=10V, TC=25°C
45A
ID@VGS=10V, TA=25°C
15A
RDSON(TYP) VGS=10V, ID=11.5A 9.5mΩ
Features
⢠Single Drive Requirement
⢠Low On-resistance
⢠Fast Switching Characteristic
⢠Repetitive Avalanche Rated
⢠Pb-free lead plating and Halogen-free package
Symbol
MTE011N10RH8
Gï¼Gate Dï¼Drain Sï¼Source
Outline
Pin 1
S
S
S
G
DFN5Ã6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTE011N10RH8-0-T6-G
Package
DFN 5 Ã6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13â reel
Product rank, zero for no rank products
Product name
MTE011N10RH8
CYStek Product Specification
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