MTE011N10RFP Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C169FP
Issued Date : 2015.12.01
Revised Date : 2016.04.27
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE011N10RFP
Features
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
 Low On Resistance
RDS(ON)@VGS=10V, ID=11A
 Simple Drive Requirement
 Low Gate Charge
 Fast Switching Characteristic
 Insulating package, front/back side insulating voltage=2500V(AC)
 RoHS compliant package
100V
34A
9A
11 mΩ(typ)
Symbol
MTE011N10RFP
Outline
TO-220FP
G：Gate
D：Drain
S：Source
GDS
Ordering Information
Device
MTE011N10RFP-0-UB-S
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE011N10RFP
CYStek Product Specification