MTE010N10F3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C944F3
Issued Date : 2014.06.09
Revised Date : 2015.09.04
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE010N10F3
BVDSS
ID@ TC=25°C, VGS=10V
(silicon limit)
RDSON(TYP) @ VGS=10V, ID=50A
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
RDSON(TYP) @ VGS=7V, ID=20A
100V
70A
9.6mΩ
10.1mΩ
Symbol
MTE010N10F3
Outline
TO-263
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
Package
Shipping
MTE010N10F3-0-T7-X
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE010N10F3
CYStek Product Specification