MTDP2004S6R Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – Dual P-CHANNEL MOSFET

CYStech Electronics Corp.
Spec. No. : C698S6R
Issued Date : 2012.07.16
Revised Date :
Page No. : 1/ 8
Dual P-CHANNEL MOSFET
MTDP2004S6R
Features
• Low on-resistance
• High ESD capability
• High speed switching
• Low-voltage drive(-1.8V)
• Pb-free package
BVDSS
ID
RDSON@VGS=-4.5V, ID=-430mA
RDSON@VGS=2.5V, ID=-300mA
RDSON@VGS=-1.8V, ID=-150mA
-20V
-500mA
0.64Ω(typ)
1.1Ω(typ)
1.7Ω (typ)
Equivalent Circuit
MTDP2004S6R
Outline
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-20
VGS
±8
V
Continuous Drain Current @ TA=25°C, VGS=-4.5V (Note 3)
Continuous Drain Current @ TA=85°C, VGS=-4.5V (Note 3)
ID
-500
-360
mA
Pulsed Drain Current (Notes 1, 2)
IDM
-1.5
A
Maximum Power Dissipation
(Note 3)
TA=25℃
TA=85℃
300
PD
mW
160
Operating Junction and Storage Temperature
Tj, Tstg -55~+150
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3.Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
MTDP2004S6R
CYStek Product Specification