MTDNK2N6 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – Dual N-CHANNEL ENHANCEMENT MODE MOSFET

CYStech Electronics Corp.
Spec. No. : C446N6
Issued Date : 2009.06.15
Revised Date : 2013.09.06
Page No. : 1/7
Dual N-CHANNEL ENHANCEMENT MODE MOSFET
MTDNK2N6
BVDSS
ID
RDSON(MAX)
60V
0.51A
1.6Ω
Description
The MTDNK2N6 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free package
Equivalent Circuit
MTDNK2N6
* with gate protection diode
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol Limits
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
Continuous Drain Current @TA=25 °C (Note 1)
ID
0.51
Pulsed Drain Current (Note 2, 3)
IDM
1.5
Total Power Dissipation @ TA=25 °C
Linear Derating Factor
Pd
0.96
0.016
Operating Junction Temperature and Storage Temperature Range Tj, Tstg -55~+150
Thermal Resistance, Junction-to-Ambient (Note 1)
Rth,ja
130
Note : 1.Surface mounted on 0.125 in² copper pad of FR-4 board. 180℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Unit
V
V
A
A
W
W / °C
°C
°C/W
MTDNK2N6
CYStek Product Specification