MTDN8810T8 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C582T8
Issued Date : 2013.07.25
Revised Date : 2013.09.03
Page No. : 1/8
Dual N-Channel Enhancement Mode MOSFET
MTDN8810T8
BVDSS
ID
RDSON@VGS=4.5V, ID=5A
RDSON@VGS=2.5V,ID=2.6A
RDSON@VGS=1.8V,ID=1A
20V
5A
17.5mΩ(typ)
25mΩ(typ)
41mΩ(typ)
Description
The MTDN8810T8 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness and is
suitable for applications such as power management of portable device.
The TSSOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• 1.8V drive available
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
Equivalent Circuit
MTDN8810T8
G：Gate S : Source D : Drain
Ordering Information
Device
MTDN8810T8
Package
TSSOP-8
(Pb-free lead plating package)
Shipping
3000 pcs/ Tape & Reel
Marking
8810TS
MTDN8810T8
CYStek Product Specification