MTDN8810AT8 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C779T8
Issued Date : 2014.04.15
Revised Date :
Page No. : 1/8
Dual N-Channel Enhancement Mode MOSFET
MTDN8810AT8
Features
• 1.8V drive available
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
BVDSS
ID
RDSON@VGS=4.5V, ID=5A
RDSON@VGS=2.5V,ID=2.6A
RDSON@VGS=1.8V,ID=1A
20V
5A
17.5mΩ(typ)
25mΩ(typ)
41mΩ(typ)
Equivalent Circuit
MTDN8810AT8
G：Gate S : Source D : Drain
Ordering Information
Device
MTDN8810AT8-0-T6-G
Package
TSSOP-8
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs/ Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTDN8810AT8
CYStek Product Specification