MTDN8233X6 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – Dual N -Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C911X6
Issued Date : 2013.07.12
Revised Date : 2013.07.23
Page No. : 1/10
Dual N -Channel Enhancement Mode MOSFET
MTDN8233X6 BVDSS
ID
RDSON (TYP.)
VGS=4.5V
VGS=4.5V, ID=5.5A
VGS=4.0V, ID=5.5A
VGS=3.7V, ID=5.5A
VGS=3.1V, ID=5.5A
VGS=2.5V, ID=5.5A
20V
11A
6.0mΩ
6.0mΩ
6.2 mΩ
6.7 mΩ
7.8 mΩ
Description
The MTDN8233X6 consists of two N-channel enhancement-mode MOSFETs in a single TDFN2×3-6L
package, providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TDFN2×3-6L package is universally preferred for all commercial-industrial surface mount
applications.
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• ESD protected
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTDN8233X6
Outline
TDFN2×3-6L
G：Gate S：Source D：Drain
MTDN8233X6
CYStek Product Specification